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v02.1201
MICROWAVE CORPORATION
HMC331
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT
Features
Conversion Loss: 14 dB Fo, 3Fo, 4Fo Isolation: 50 dB Passive: No Bias Required
Typical Applications
The HMC331 is suitable for: * Wireless Local Loop * LMDS, VSAT, and Pt to Pt Radios * Test Equipment
4
FREQ. MULTIPLIERS - CHIP
Functional Diagram
General Description
The HMC331 is a passive miniature frequency doubler MMIC. Suppression of undesired fundamental and higher order harmonics is 50 dB typical with respect to input signal level. The doubler utilizes the same GaAs Schottky diode/balun technology found in Hittite MMIC mixers. It features small size, requires no DC bias, and adds no measurable additive phase noise onto the multiplied signal.
Electrical Specifications, TA = +25 C, As a Function of Drive Level
Input = +11 dBm Parameter Frequency Range, Input Frequency Range, Output Conversion Loss FO Isolation (with respect to input level) 3FO Isolation (with respect to input level) 4FO Isolation (with respect to input level) 45 Min. Typ. 13 - 18 26 - 36 15 50 20 45 Max. Min. Input = +13 dBm Typ. 12 - 18 24 - 36 14 50 20 45 Max. Min. Input = +15 dBm Typ. 12 - 18 24 - 36 14 50 19 Max. Units GHz GHz dB dB
50
60
45
60
47
60
dB
50
60
50
60
50
60
dB
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1201
HMC331
GaAs MMIC FREQUENCY DOUBLER, 12 - 18 GHz INPUT
Conversion Loss vs. Conversion Loss GaAs MMIC SUB-HARMONICALLY @ 25 Deg C Vs. Drive Level PUMPED MIXER 17 Temperature @ +15 dBm Drive Level
0
+ 25 C + 85 C - 55 C
25 GHz
0 -5 CONVERSION GAIN (dB) -10 -15 -20 -25 -30 12 13 14 15 16 17 18 12 13 14 15 16 17 18 INPUT FREQUENCY (GHz) FREQUENCY (GHz)
+ 15 dBm + 13 dBm + 11 dBm
CONVERSION GAIN (dB)
-5
-10
-15
-20
4
FREQ. MULTIPLIERS - CHIP
4 - 23
-25
Isolation @ +15 dBm Drive Level*
0
Fo 3Fo 4Fo
Input Return Loss vs. Drive Level
0 -5 -10 -15 -20 -25 -30
+ 15 dBm + 13 dBm + 11 dBm
-20 ISOLATION (dB)
-40
-60
-80
-100 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
12
13
14
15
16
17
18
FREQUENCY (GHz)
*With respect to input level
Output Return Loss For Three Input Frequencies
0 OUTPUT RETURN LOSS (dB0
13 GHz In 15 GHz In 18 GHz In
-6
-12
-18
-24
-30 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 OUTPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1201
HMC331
GaAs MMIC FREQUENCY DOUBLER, 12 - 18 GHz INPUT
Absolute Maximum Ratings
Input Drive Storage Temperature Operating Temperature +27 dBm -65 to +150 C -55 to +85 C
4
Outline Drawing
FREQ. MULTIPLIERS - CHIP
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1201
HMC331
GaAs MMIC FREQUENCY DOUBLER, 12 - 18 GHz INPUT
MMIC Assembly Techniques for HMC331
Ribbon Bond 3 mil Ribbon Bond
4
FREQ. MULTIPLIERS - CHIP
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075mm ( 3 mil) width and minimal length <0.31mm ( <12 mils) is recommended to minimize inductance on RF ports.,
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1201
HMC331
GaAs MMIC FREQUENCY DOUBLER, 12 - 18 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
4
FREQ. MULTIPLIERS - CHIP
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40 - 60 grams. DC bonds of 0.001" (0.025mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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